IXTA4N80P
IXTP4N80P
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
TO-263 (IXTA) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
R G = 18 Ω (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
2.5
4.0
750
70
6.3
22
24
60
29
14.2
4.8
4.8
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
1.25 ° C/W
R thCS
(TO-220)
0.25
° C/W
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V
I F = 3.5 A, -di/dt = 100 A/ μ s,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
560
3.5
8
1.5
A
A
V
ns
TO-220 (IXTP) Outline
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change
limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
相关PDF资料
IXTP50N085T MOSFET N-CH 85V 50A TO-220
IXTP50N20PM MOSFET N-CH 200V 20A TO-220
IXTP64N055T MOSFET N-CH 55V 64A TO-220
IXTP70N085T MOSFET N-CH 85V 70A TO-220
IXTP7N60PM MOSFET N-CH 600V 4A TO-220
IXTP7N60P MOSFET N-CH 600V 7A TO-220
IXTP8N50PM MOSFET N-CH 500V 4A TO-220
IXTP8N50P MOSFET N-CH 500V 8A TO-220
相关代理商/技术参数
IXTP4N90 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-220AB
IXTP4N90A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-220AB
IXTP4N95 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 4A I(D) | TO-220AB
IXTP4N95A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 4A I(D) | TO-220AB
IXTP4P45 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-220
IXTP4P50 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220
IXTP50N085T 功能描述:MOSFET 50 Amps 85V 20.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP50N20P 功能描述:MOSFET 50 Amps 200V 0.06 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube